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LC05132C01MT Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza LC05132C01MT
Descripción Electrónicos  Protection IC with integrated Power MOS FET
Download  16 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

LC05132C01MT Datasheet(HTML) 2 Page - ON Semiconductor

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LC05132C01MT
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Specifications
Absolute Maximum Ratings at Ta = 25
C
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
VCC
Between PAC+ and VCC : R1=680
0.3 to 12.0
V
S1 - S2 voltage
VS1-S2
24.0
V
CS terminal Input voltage
CS
VCC
24.0 to VCC+0.3
V
Charge or discharge current
BAT
, PAC
10.0
A
RSTB Input voltage
RSTB
0.3 to 7
V
Storage temperature
Tstg
55 to +125
C
Current between S1 and S2(DC)
ID
VCC = 3.7V
10.0
A
Current between S1 and S2
(continuous pulse)
IDP
Pulse Width<10us, duty cycle<1%
35
A
Operating ambient temperature
Topr
40 to +100
C
Allowable power dissipation
Pd
Glass epoxy four-layer board
Board size L=38.7mm W=4.4mm H=1.6mm
450
mW
Junction temperature
Tj
125
C
Caution 1) Absolute maximum ratings represent the values which cannot be exceeded at any given time.
Caution 2) If you intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within
the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for confirmation.
Example of Application Circuit
Controller IC
S1
S2
CS
R2
R1
C1
VCC
RSTB
Battery
PAC+
PAC-
VSS
RSTB
VCC
R3
Components
Recommended value
MAX
unit
Description
R1
680
1k
R2
1k
2k
R3
1k
2k
C1
1.0µ
-
F
* We don’t guarantee the characteristics of the circuit shown above.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.


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