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2N3741 Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N3741 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 3 page MSC1041.PDF 03-12-99 2N3741 ABSOLUTE MAXIMUM RATINGS: ABSOLUTE MAXIMUM RATINGS: SYMBOL CHARACTERISTIC VALUE UNITS VCEO* Collector-Emitter Voltage 80 Vdc VEB* Emitter-Base Voltage 7.0 Vdc VCB* Collector-Base Voltage 80 Vdc IC* Peak Collector Current 10 Adc IC* Continuous Collector Current 4.0 Adc IB* Base Current 2.0 Adc TSTG* Storage Temperature -65 to 200 °°C TJ* Operating Junction Temperature -65 to 200 °°C PD* θθ JC Total Device Dissipation TC = 25°°C Derate above 25 °°C Thermal Impedance 25 0.143 7 Watts W/ °°C °°C/W Medium Power PNP Transistors TO-66 APPLICATIONS: • Drivers • Switches • Medium-Power Amplifiers 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 DESCRIPTION: DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200 °°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. * Indicates JEDEC registered data. FEATURES: • Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp • High Gain Characteristics: hFE @ IC = 250 mA: 30-100 • Excellent Safe Area Limits • Complementary to NPN 2N3767 (2N3741) |
Número de pieza similar - 2N3741 |
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Descripción similar - 2N3741 |
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