Nombre de pieza
         Descripción
2N4240

 5 Amp, 500V, High Voltage NPN Silicon Power Transistors ( 3 Page)


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MSC1058.PDF 05-19-99
2N4240
ELECTRICAL CHARACTERISTICS:
ELECTRICAL CHARACTERISTICS:
(25
°°Case Temperature Unless Otherwise Noted)
VALUE
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Min.
Max.
Units
VCEO(sus)*
Collector-Emitter
Sustaining Voltage
IC = 0.2 Amp (Notes è
è and 2)
300
----
Volts
VCER(sus)
Collector-Emitter
Sustaining Voltage
IC = 0.2A, RBE = 50
(Notes 1 and 2)
400
----
Volts
ICEV*
Collector Cutoff Current
VCE = 450V, VBE = -1.5V
----
2.0
mA.
ICEV*
Collector Cutoff Current
TC = 150°°C
VCE = 300V, VBE = -1.5V
----
5.0
mA.
ICEO*
Collector Cutoff Current
VCE = 150V, IB = 0
----
5.0
mA.
IEB0*
Emitter Cutoff Current
VEB = 6V, IC = 0
----
0.5
mA.
hFE*
DC Forward Current
Transfer Ratio
(Note 1)
IC = 0.1A, VCE = 10V
IC = 0.75A, VCE = 10V
IC = 0.75A, VCE = 2V
40
30
10
----
150
100
----
----
----
VCE(sat)*
Collector-Emitter
Saturation Voltage
(Note 1)
IC = 0.75A, IB = .075A
----
1.0
Volts
VBE(sat)*
Base-Emitter Saturation
Voltage (Note 1)
IC = 0.75A, IB = .075A
----
1.8
Volts
IS/b
Second-Breakdown
Collector Current (with
base forward biased)
VCE = 100V, t = 1.0sec.
0.35
----
A
ES/b
Second-Breakdown
Energy (with base
reverse biased)
VEB = 4V, RBE = 20
, L = 100µµh
50
----
µµJ
hfe*
Common-Emitter Small-
Signal Forward Current
Transfer Ratio
VCE = 10V, IC = 0.2A, f = 5 MHz
3
----
----
I hfe I*
Common-Emitter Small-
Signal Forward Current
Transfer Ratio, f = 5 MHz
VCE = 10V, IC = 0.2A
3.0
----
----
COb
Collector-Base
Capacitance
VCB = 10V, IE = 0, f = 1.0MHz
----
120
pf
tr*
Rise Time
IC = .75A, IB2 = .075A
----
.05
µµsec.
ts*
Storage Time
IC = .75A, IB1 = IB2 = .075A
----
6.0
µµsec.
tf*
Fall Time
IC = .75A, IB1 = IB2 = .075A
----
3.0
µµsec.
Note 1: Pulse Test: Pulse width = 300
µµSec., Rep. Rate 60Hz.
Note 2: Caution - Do not use Curve Tracer.
* Indicates JEDEC registered data.
1  2  3 



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