SS7505_15 datasheet(1/7 Pages) GOOD-ARK

No. de pieza	SS7505

Descripción Electrónicos	75V N-Channel MOSFET

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SSF7505

75V N-Channel MOSFET

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Rev.1.0

Main Product Characteristics

Features and Benefits

Description

Absolute Max Rating

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V①

170

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V①

110

IDM

Pulsed Drain Current②

670

A

Power Dissipation③

272

W

PD @TC = 25°C

Linear Derating Factor

2.0

W/°C

VDS

Drain-Source Voltage

75

V

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy @ L=0.3mH②

960

mJ

IAR

Avalanche Current @ L=0.3mH②

80

A

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to + 175

°C

VDSS

75V

RDS(on)

3.3mohm(typ.)

ID

170A

TO-220

Marking and Pin

Assignment

Schematic Diagram



Advanced trench MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



175℃ operating temperature



Lead free product

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient and reliable device for use in power switching application and a wide variety of other applications.

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