MRF951 datasheet(2/5 Pages) MICROSEMI | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Nombre de pieza

Descripción

MRF951

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS ( 5 Page)

MICROSEMI

2 page

MSC1326.PDF 10-25-99

MRF951

ELECTRICAL SPECIFICATIONS (Tcase = 25

°C)

STATIC

(off)

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

BVCEO

Collector-Emitter Breakdown Voltage

(IC = 0.1 mAdc, IB = 0)

Vdc

BVCBO

Collector-Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

Vdc

ICBO

Collector Cutoff Current

(VCE = 10 Vdc, VBE = 0 Vdc)

0.1

µA

IEBO

Collector Cutoff Current

(VCE = 1.0 Vdc, VBE = 0 Vdc)

0.1

µA

(on)

HFE

DC Current Gain

(IC = 5.0 mAdc, VCE = 6.0 Vdc)

200

DYNAMIC

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

CCB

Collector-Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

.45

1.0

Ftau

Current-Gain Bandwidth Product

(IC = 30 mAdc, VCE = 6 Vdc, f = 1.0 GHz)

8.0

GHz

1 2 3 4 5

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