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MSAER38N10A Datasheet(PDF) 2 Page - Microsemi Corporation |
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MSAER38N10A Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 2 page DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) BVDSS VGS = 0 V, ID = 250 µA 100 V Temperature Coefficient of the Drain-to-Source Breakdown Voltage ∆BV DSS/ ∆T J 0.13 V/ °C Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 2.0 4.0 V Gate-to-Source Leakage Current IGSS VGS = ± 20V DC, VDS = 0 T J = 25 °C T J = 125 °C ±100 ±200 nA Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) IDSS VDS =0.8 •BV DSS TJ = 25 °C VGS = 0 V T J = 125 °C 25 250 µA Static Drain-to-Source On-State Resistance (1) RDS(on) VGS= 10V, ID= 24A T J = 25 °C I D= 38A T J = 25 °C I D= 24A T J = 125 °C 1.0 0.055 0.065 Ω Forward Transconductance (1) gfs VDS ≥ 15 V; I D = 24 A 9 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 3700 1100 200 pF Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) tr td(off) tf VGS = 10 V, V DS = 50 V, ID = 38 A, R G = 2.35 Ω 35 190 170 130 ns Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Qg(on) Qgs Qgd VGS = 10 V, V DS = 50V, ID = 38A 50 8 25 125 22 65 nC Body Diode Forward Voltage (1) VSD IF = IS, VGS = 0 V MSAE MSAF 1.2 1.8 V Reverse Recovery Time (Body Diode) trr IF = 10 A, MSAE -di/dt = 100 A/ µs, MSAF 50 500 ns Reverse Recovery Charge Qrr IF = 10 A, MSAE di/dt = 100 A/ µs, MSAF tbd 2.9 µC Electrical Parameters @ 25 °°C (unless otherwise specified) Notes (1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2% (2) Microsemi Corp. does not manufacture the mosfet die; contact factory for details MSAER38N10A MSAFR38N10A |
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