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ESD7451N2T5G Datasheet(PDF) 2 Page - ON Semiconductor |
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ESD7451N2T5G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page Bi−Directional TVS IPP IPP V I IR IT IT IR VRWM VC VBR VRWM VC VBR ESD7451, SZESD7451 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM 3.3 V Breakdown Voltage (Note 2) VBR IT = 1 mA 6.0 V Reverse Leakage Current IR VRWM = 3.3 V < 1.0 50 nA Clamping Voltage (Note 3) VC IPP = 1 A 10 V Clamping Voltage (Note 3) VC IPP = 3 A 13 V ESD Clamping Voltage VC Per IEC61000−4−2 Junction Capacitance CJ VR = 0 V, f = 1 MHz VR = 0 V, f = 1 GHz 0.25 0.22 0.35 0.35 pF Dynamic Resistance RDYN TLP Pulse 0.55 W 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. |
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