ESD8118MUTAG datasheet(3/10 Pages) ONSEMI

No. de pieza	ESD8118MUTAG

Descripción Electrónicos	Low Capacitance Array for High Speed Data Lines

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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ESD8118

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ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

VRWM

Working Peak Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

VHOLD

Holding Reverse Voltage

IHOLD

Holding Reverse Current

RDYN

Dynamic Resistance

IPP

Maximum Peak Pulse Current

VC

Clamping Voltage @ IPP

VC = VHOLD + (IPP * RDYN)

Uni−Directional TVS

IPP

V

I

IR

IT

VRWM

VCL VBR

VCL

RDYN

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

I/O Pin to GND

3.3

V

Breakdown Voltage

VBR

IT = 1 mA, I/O Pin to GND

4.0

5.0

V

Reverse Leakage Current

IR

VRWM = 3.3 V, I/O Pin to GND

1.0

mA

Clamping Voltage (Note 1)

VC

IEC61000−4−2,

±8 KV Contact

See Figures 2 and 3

V

Clamping Voltage

TLP (Note 2)

See Figures 6 through 9

VC

IPP = 8 A

IPP = −8 A

IEC 61000−4−2 Level 2 equivalent

(

±4 kV Contact, ±4 kV Air)

8.5

−4.5

V

IPP = 16 A

IPP = −16 A

IEC 61000−4−2 Level 4 equivalent

(

±8 kV Contact, ±15 kV Air)

11.4

−8.0

Dynamic Resistance

RDYN

I/O Pin to GND

GND to I/O Pin

0.35

0.44

W

Junction Capacitance

CJ

VR = 0 V, f = 1 MHz between I/O Pins and GND

VR = 0 V, f = 1 MHz, between I/O Pins

VR = 0 V, f = 1 MHz, TA = 65°C between I/O Pins

and GND

0.30

0.15

0.37

0.35

0.20

0.47

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. For test procedure see Figures 4 and 5 and application note AND8307/D.

2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.

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