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ACE7402M Datasheet(PDF) 3 Page - ACE Technology Co., LTD.

No. de pieza ACE7402M
Descripción Electrónicos  N-Channel 30-V MOSFET
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Fabricante Electrónico  ACE [ACE Technology Co., LTD.]
Página de inicio  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE7402M Datasheet(HTML) 3 Page - ACE Technology Co., LTD.

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ACE7402M
N-Channel 30-V MOSFET
VER 1.1
3
Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Gate Source Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
1
V
Gate Body Leakage
IGSS
VDS=0V, VGS=±20V
±100
nA
Zero Gate Voltage Drain Current
IDSS
VDS=24V, VGS=0V
1
uA
VDS=24V, VGS=0V, TJ=55℃
25
On-State Drain-Current
a
ID(on)
VDS=5V, VGS=10V
30
A
Static Drain-Source On-Resistance
a
rDS(ON)
VGS=10V,ID=15A
8.5
m
Ω
VGS=4.5V,ID=12.4A
16
Forward Transconductance
a
gfS
VDS=15V,ID=15A
15
S
Diode Forward Voltage
a
VSD
IS=3.2A ,VGS=0V
0.79
V
Dynamic
b
Total Gate Charge
Qg
VDS=15V, VGS=4.5V,
ID=15A
10
nC
Gate-Source Charge
Qgs
5.3
Gate-Drain Charge
Qgd
3.8
Turn-On Delay Time
td(on)
VDS=15V, ,RL=15
Ω
ID=15A ,VGEN=10V
RGEN=6
Ω,
6
ns
Rise Time
tf
6
Turn-Off Delay Time
td(off)
28
Fall Time
tf
8
Input Capacitance
Ciss
VDS=15V, VGS=0V
f=1MHz
1379
pF
Output Capacitance
Coss
156
Reverse Transfer Capacitance
Crss
116
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing
.


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