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FW217A-TL-2W Datasheet(PDF) 4 Page - ON Semiconductor |
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FW217A-TL-2W Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 7 page FW217A No.8994-4/7 Total Gate Charge, Qg -- nC VGS -- Qg A S O Drain-to-Source Voltage, VDS -- V IT16786 0 0 1 2 3 4 5 6 7 10 8 10 8 9 46 2 IT16787 VDS=10V ID=4.5A 0.01 0.1 1.0 10 23 5 7 23 5 7 23 5 7 23 5 100 7 0.01 0.1 1.0 10 100 7 5 7 5 3 2 7 5 3 2 7 5 3 2 3 2 ID=6A 100ms 1ms 10ms 100 μs Operation in this area is limited by RDS(on). DC operation IDP=24A(PW≤10μs) 10s Ta=25 °C Single pulse 1unit When mounted on ceramic substrate (2000mm2 ×0.8mm) IT16790 IT16789 0 25 50 75 100 125 150 175 0 0.6 0.2 0.4 0.8 1.0 1.4 1.2 2.2 2.0 1.6 1.8 2.4 0 0 0.4 0.8 0.2 0.6 0.4 1.2 1.0 1.2 1.0 0.8 0.2 0.6 1.4 1.8 1.6 1.4 1.8 1.6 2.4 2.2 2.0 2.4 2.2 2.0 Ambient Temperature, Ta -- °C PD -- Ta 1unit When mounted on ceramic substrate (2000mm2 ×0.8mm), PW≤10s Allowable Power Dissipation(FET2), PD -- W PD (FET1) -- PD (FET2) When mounted on ceramic substrate (2000mm2 ×0.8mm), PW≤10s Taping Specification FW217A-TL-2W |
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