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IRF530 Datasheet(PDF) 1 Page - ON Semiconductor |
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IRF530 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Publication Order Number: IRF530/D IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 100 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 100 Vdc Gate−to−Source Voltage — Continuous Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS) VGS VGSM ± 20 ± 25 Vdc Vdc Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 mS) ID ID IDM 14 10 49 Adc Apk Total Power Dissipation @ TC = 25°C Derate above 25°C PD 78 0.63 Watts W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain−to−Source Avalanche Energy — STARTING TJ = 25°C (VDD = 75 V, VGS = 10 V, PEAK IL = 14 A, L = 1.0 mH, RG = 25 W) EAS 98 mJ THERMAL CHARACTERISTICS Thermal Resistance — Junction−to−Case° Thermal Resistance — Junction−to−Ambient° RθJC RθJA 1.60 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 275 °C E−FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. http://onsemi.com TMOS POWER FET 14 AMPERES, 100 VOLTS RDS(on) = 0.140 W CASE 221A−09 TO-220AB ® D S G |
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