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IRF530 Datasheet(PDF) 1 Page - ON Semiconductor

No. de pieza IRF530
Descripción Electrónicos  N?묬hannel Enhancement?묺ode Silicon Gate
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
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IRF530 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
IRF530/D
IRF530
Product Preview
TMOS E−FET.
Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon
Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor controls.
These devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating area are critical and offer
additional safety margin against unexpected voltage transients.
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
100
Vdc
Gate−to−Source Voltage — Continuous
Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS)
VGS
VGSM
± 20
± 25
Vdc
Vdc
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 mS)
ID
ID
IDM
14
10
49
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
78
0.63
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
°C
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Drain−to−Source Avalanche Energy — STARTING TJ = 25°C
(VDD = 75 V, VGS = 10 V, PEAK IL = 14 A, L = 1.0 mH, RG = 25 W)
EAS
98
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction−to−Case°
Thermal Resistance — Junction−to−Ambient°
RθJC
RθJA
1.60
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
275
°C
E−FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves
the right to change or discontinue this product without notice.
http://onsemi.com
TMOS POWER FET
14 AMPERES, 100 VOLTS
RDS(on) = 0.140 W
CASE 221A−09
TO-220AB
®
D
S
G


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