MMSF4P01HD datasheet(3/12 Pages) ONSEMI

No. de pieza	MMSF4P01HD

Descripción Electrónicos	Power MOSFET

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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MMSF4P01HD

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TYPICAL ELECTRICAL CHARACTERISTICS

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (°C)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

048

Figure 3. On−Resistance versus

Gate−To−Source Voltage

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

10

1000

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−To−Source Leakage

Current versus Voltage

VDS ≥ 10 V

−55

°C

25

°C

ID = 2 A

04

8

−50

−25

0

25

50

75

100

125

150

0

3

6

12

VGS = 0 V

TJ = 125°C

TJ = 25°C

VGS = 2.7 V

100

9

100

°C

26

6

2

4.5 V

8

6

4

2

0

TJ = 100°C

0.16

0.12

0.08

0.04

0

0.1

0.09

0.08

0.06

8

6

4

2

0

1

1.6

1.4

2

1.2

1.8

2.4

2.2

0.07

0

0.5

1

2

1.5

VGS = 4.5 V

ID = 4 A

TJ = 25°C

4.5 V

0

0.6

0.4

1

0.2

0.8

1.4

1.6

1.2

1.8

2

TJ = 25°C

3.1 V

VGS = 8 V

1.5 V

2.5 V

1.7 V

1.9 V

2.1 V

2.3 V

2.7 V

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