Nombre de pieza
         Descripción
SUR503EF

 Epitaxial Planar Type NPN Silicon Transistor ( 3 Page)


AUK
100% 
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background image
KST-J003-003
2
SUR503EF
Absolute maximum ratings (Tr1, Tr2)
Ta=25
°C
Characteristic
Symbol
Ratings
Unit
Out Voltage
VO
50
V
Input Voltage
VI
20
V
Out Current
IO
100
mA
Power Dissipation
PD
100
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Electrical Characteristics(Tr1, Tr2 : PNP)
Ta=25
°C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Output Cut-off Current
IO(OFF)
VO=50V, VI=0
-
-
500
nA
DC Current Gain
GI
VO=5V, IO=10mA
80
200
-
-
Output Voltage
VO(ON)
IO=10mA, II=0.5mA
-
0.1
0.3
V
Input Voltage (ON)
VI(ON)
VO=0.2V, IO=5mA
-
0.9
1.3
V
Input Voltage (OFF)
VI(OFF)
VO=5V, IO=0.1mA
0.5
0.65
-
V
Transition Frequency
fT
*
VO=10V, IO=5mA
-
200
-
MHz
Input Current
II
VI=5V
-
-
1.8
mA
* : Characteristic of Transistor Only
1  2  3 



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