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KST-6002-004 2 SUT484J Absolute maximum ratings (Tr1, Tr2) Ta=25 °C Ratings Characteristic Symbol Tr1 Tr2 Unit Collector-Base voltage VCBO -50 60 V Collector-Emitter voltage VCEO -50 50 V Emitter-base voltage VEBO -5 5 V Collector current IC -150 150 mA Collector dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Tr1 : PNP) Ta=25 °C Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-100µA, IE=0 -50 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -50 - - V Emitter-Base breakdown voltage BVEBO IE=-10µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-50V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 µA DC current gain hFE VCE=-6V, IC=-2mA 120 - 400 - Collector-Emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA - - -0.3 V Transition frequency fT VCE=-10V, IC=-1mA, f=100MHz 80 - - MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 4 7 pF Electrical Characteristics (Tr2 : NPN) Ta=25 °C Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=100µA, IE=0 60 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 50 - - V Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 5 - - V Collector cut-off current ICBO VCB=60V, IE=0 - - 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 µA DC current gain hFE VCE=6V, IC=2mA 70 - 700 - Collector-Emitter saturation voltage VCE(sat) IC=100mA, IB=10mA - - 0.25 V Transition frequency fT VCE=10V, IC=1mA, f=100MHz 80 - - MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - 2 3.5 pF |
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