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DMG4N60SK3 Datasheet(PDF) 4 Page - Diodes Incorporated

No. de pieza DMG4N60SK3
Descripción Electrónicos  600V N-CHANNEL ENHANCEMENT MODE MOSFET
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMG4N60SK3 Datasheet(HTML) 4 Page - Diodes Incorporated

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DMG4N60SK3
Document number: DS37697 Rev. 2 - 2
4 of 7
www.diodes.com
November 2015
© Diodes Incorporated
DMG4N60SK3
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
ID=1mA
ID=250A
0
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
VGS=10V, ID=2A
1
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
1
2
3
4
5
6
7
8
9
10
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VGS=0V,
TA=-55℃
VGS=0V, TA=25℃
VGS=0V, TA=85℃
VGS=0V, TA=125℃
VGS=0V, TA=150℃
0
2
4
6
8
10
0
3
6
9
12
15
Qg, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
VDS=480V, ID=4A
0.01
0.1
1
10
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J,(MAX)=150℃
T
C=25℃
Single Pulse
DUT on infinite heatsink
V
GS=10V
R
DS(ON) Limited
PW=1s
PW=100ms
PW=10ms
PW=1ms
PW=100s
PW=10s
PW=1s


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