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BC817W Datasheet(PDF) 2 Page - Infineon Technologies AG

No. de pieza BC817W
Descripción Electrónicos  NPN Silicon AF Transistors
Download  5 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BC817W Datasheet(HTML) 2 Page - Infineon Technologies AG

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BC817W, BC818W
2
Nov-29-2001
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BC817W
BC818W
V(BR)CEO
45
25
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
BC817W
BC818W
V(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
5
-
-
Collector cutoff current
VCB = 25 V, IE = 0
ICBO
-
-
100
nA
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
50
µA
Emitter cutoff current
VEB = 4 V, IC = 0
IEBO
-
-
100
nA
DC current gain 1)
IC = 100 mA, VCE = 1 V
hFE-grp.16
hFE-grp.25
hFE-grp.40
hFE
100
160
250
160
250
350
250
400
630
-
DC current gain 1)
IC = 300 mA, VCE = 1 V
hFE-grp.16
hFE-grp.25
hFE-grp.40
hFE
60
100
170
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat
-
-
0.7
V
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
VBEsat
-
-
1.2
1) Pulse test: t
≤ 300µs, D = 2%


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