BCP51-16 datasheet(2/5 Pages) INFINEON

No. de pieza	BCP51-16

Descripción Electrónicos	PNP Silicon AF Transistors

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

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2 / 5 page

BCP51...BCP53

2

Nov-29-2001

Maximum Ratings

Parameter

Symbol

BCP51

BCP52

BCP53

Unit

Collector-emitter voltage

VCEO

45

60

80

V

Collector-emitter voltage RBE

1k

VCER

45

60

100

Collector-base voltage

VCBO

45

60

100

Emitter-base voltage

VEBO

5

A

DC collector current

1

IC

Peak collector current

1.5

ICM

Base current

IB

mA

100

IBM

Peak base current

200

W

Total power dissipation, TS = 124 °C

Ptot

1.5

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point1)

RthJS

17

K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

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BCP51-16 Datasheet(PDF) 2 Page - Infineon Technologies AG

BCP51-16 Datasheet(HTML) 2 Page - Infineon Technologies AG

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