BC857W datasheet(3/8 Pages) INFINEON

No. de pieza	BC857W

Descripción Electrónicos	PNP Silicon AF Transistors

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

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3 / 8 page

BC856W...BC860W

3

Dec-11-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

BC856W

BC857/860W

BC858/859W

V(BR)CES

80

50

30

-

V

Emitter-base breakdown voltage

IE = 1 µA, IC = 0

V(BR)EBO

5

-

Collector cutoff current

VCB = 30 V, IE = 0

ICBO

-

15

nA

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

-

5

µA

DC current gain 1)

IC = 10 µA, VCE = 5 V

hFE-group A

hFE-group B

hFE-group C

hFE

-

140

250

480

-

DC current gain 1)

IC = 2 mA, VCE = 5 V

hFE-group A

hFE-group B

hFE-group C

hFE

125

220

420

180

290

520

250

475

800

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

75

250

300

650

mV

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

850

-

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

600

-

650

-

750

820

1) Pulse test: t

≤=300µs, D = 2%

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BC857W Datasheet(PDF) 3 Page - Infineon Technologies AG

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