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SI53325 Datasheet(PDF) 6 Page - Silicon Laboratories |
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SI53325 Datasheet(HTML) 6 Page - Silicon Laboratories |
6 / 27 page Si53325 6 Rev. 1.0 Table 8. Thermal Conditions Parameter Symbol Test Condition Value Unit 32-eLQFP Thermal Resistance, Junction to Ambient JA Still air 54.9 °C/W 32-eLQFP Thermal Resistance, Junction to Case JC Still air 10.0 °C/W 32-QFN Thermal Resistance, Junction to Ambient JA Still air 99.6 °C/W 32-QFN Thermal Resistance, Junction to Case JC Still air 10.3 °C/W Table 9. Absolute Maximum Ratings Parameter Symbol Test Condition Min Typ Max Unit Storage Temperature TS –55 — 150 C Supply Voltage VDD –0.5 — 3.8 V Input Voltage VIN –0.5 — VDD+ 0.3 V Output Voltage VOUT —— VDD+ 0.3 V ESD Sensitivity HBM HBM, 100 pF, 1.5 kΩ — — 2000 V ESD Sensitivity CDM — — 500 V Peak Soldering Reflow Temperature TPEAK Pb-Free; Solder reflow profile per JEDEC J-STD-020 — — 260 C Maximum Junction Temperature TJ — — 125 C Note: Stresses beyond those listed in this table may cause permanent damage to the device. Functional operation specification compliance is not implied at these conditions. Exposure to maximum rating conditions for extended periods may affect device reliability. |
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