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CDCLVP1204RGTT Datasheet(PDF) 5 Page - Texas Instruments |
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CDCLVP1204RGTT Datasheet(HTML) 5 Page - Texas Instruments |
5 / 32 page CDCLVP1204 www.ti.com SCAS880F – AUGUST 2009 – REVISED SEPTEMBER 2015 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Supply voltage range(2) –0.5 4.6 V VIN Input voltage range(3) –0.5 VCC + 0.5 V VOUT Output voltage range(3) –0.5 VCC + 0.5 V IIN Input current 20 mA IOUT Output current 50 mA TA Specified free-air temperature range (no airflow) –40 85 °C TJ Maximum junction temperature 125 °C Tstg Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.. (2) All supply voltages must be supplied simultaneously. (3) The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions Over operating free-air temperature range (unless otherwise noted). MIN NOM MAX UNIT VCC Supply voltage 2.375 2.50/3.30 3.60 V TA Ambient temperature –40 85 °C TPCB PCB temperature (measured at thermal pad) 105 °C 6.4 Thermal Information CDCLVP1204 THERMAL METRIC(1)(2)(3) RGT (QFN) UNIT 16 PINS RθJA 51.8, 0 LFM(4) Junction-to-ambient thermal resistance 22.6, 150 LFM(4) °C/W 19.2, 400 LFM(4) RθJC(top) Junction-to-case (top) thermal resistance 79 °C/W RθJP (5) Junction-to-pad thermal resistance 6.12(4) °C/W ψJT Junction-to-top characterization parameter 1.4 °C/W ψJB Junction-to-board characterization parameter 19 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 6.12 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. (2) The package thermal resistance is calculated in accordance with JESD 51 and JEDEC 2S2P (high-K board). (3) Connected to GND with four thermal vias (0.3-mm diameter). (4) 2 x 2 vias on Pad (5) RθJP (junction-to-pad) is used for the QFN package, because the primary heat flow is from the junction to the GND pad of the QFN package. Copyright © 2009–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: CDCLVP1204 |
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