Si4822/26-A10

10

Rev.1.0

Table 8. Thermal Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Thermal Resistance*

—80

—

°C/W

Ambient Temperature

025

70

°C

Junction Temperature

——

77

°C

*Note:

Thermal resistance assumes a multi-layer PCB with the exposed pad soldered to a topside PCB pad.

Table 9. Absolute Maximum Ratings1,2

Parameter

Symbol

Value

Unit

Supply Voltage

–0.5 to 5.8

V

Input Current3

10

mA

Operating Temperature

–40 to 95

°C

Storage Temperature

–55 to 150

°C

RF Input Level4

0.4

Notes:

1.

Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation

should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond

recommended operating conditions for extended periods may affect device reliability.

2.

The Si4822/26-A10 devices are high-performance RF integrated circuits with certain pins having an ESD rating of

< 2 kV HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.

3.

For input pins RST, SDIO, SCLK, XTALO, XTALI, BAND, TUNE2, TUNE1, IRQ, and LNA_EN.

4.

At RF input pins, FMI, and AMI.