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STF27N60M2-EP Datasheet(PDF) 5 Page - STMicroelectronics |
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STF27N60M2-EP Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 13 page STF27N60M2-EP Electrical characteristics DocID028863 Rev 1 5/13 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 20 A ISDM (1) Source-drain current (pulsed) - 80 A VSD (2) Forward on voltage VGS = 0 V, ISD = 20 A - 1.6 V trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 19: "Switching time waveform") - 271 ns Qrr Reverse recovery charge - 3.44 µC IRRM Reverse recovery current - 25.4 A trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 19: "Switching time waveform") - 352 ns Qrr Reverse recovery charge - 4.82 µC IRRM Reverse recovery current - 27.4 A Notes: (1) Pulse width is limited by safe operating area (2) Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
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