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STH290N4F6-6AG Datasheet(PDF) 1 Page - STMicroelectronics |
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STH290N4F6-6AG Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 19 page July 2015 DocID027971 Rev 1 1/19 This is information on a product in full production. www.st.com STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N- channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STH290N4F6-2AG 40 V 1.7 mΩ 180 A 300 W STH290N4F6-6AG • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STH290N4F6-2AG 290N4F6 H²PAK-2 Tape and Reel STH290N4F6-6AG H²PAK-6 |
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