STP45N60DM2AG datasheet(4/13 Pages) STMICROELECTRONICS

No. de pieza	STP45N60DM2AG

Descripción Electrónicos	Extremely high dv/dt ruggedness

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STP45N60DM2AG

4/13

DocID028065 Rev 1

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0 V, ID = 1 mA

600

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

1

µA

VGS = 0 V, VDS = 600 V,

Tcase = 125 °C

100

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 17 A

0.085

0.093

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

2500

-

pF

Coss

Output capacitance

-

120

-

Crss

Reverse transfer

capacitance

-

3

-

Coss eq.

(1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0 V

-

200

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

4

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 34 A,

VGS = 10 V (see Figure 15:

"Gate charge test circuit")

-

56

-

nC

Qgs

Gate-source charge

-

13

-

Qgd

Gate-drain charge

-

30

-

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 25 A

RG = 4.7

Ω, VGS = 10 V (see

Figure 14: "Switching times

test circuit for resistive load"

and Figure 19: "Switching

time waveform")

-

29

-

ns

tr

Rise time

-

27

-

td(off)

Turn-off delay time

-

85

-

tf

Fall time

-

6

-

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