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STI300N4F6 Datasheet(PDF) 7 Page - STMicroelectronics |
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STI300N4F6 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 13 page STI300N4F6 Electrical characteristics Doc ID 18062 Rev 2 7/13 Figure 8. Capacitance variations Figure 9. Drain-source diode forward characteristics Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Normalized BVDSS vs temperature C 6100 4100 2100 100 0 20 VDS(V) (pF) 10 30 Ciss Coss Crss 40 8100 10100 12100 14100 16100 AM15611v1 VSD 0 40 ISD(A) (V) 20 60 80 0.3 0.35 0.4 0.45 0.5 0.55 TJ=-55°C TJ=25°C TJ=175°C 0.6 0.65 0.7 0.75 0.8 AM15612v1 VGS(th) 0.6 0.4 0.2 0 -75 -25 TJ(°C) (norm) -50 0.8 0 1 ID=250 µA 1.2 75 50 100 25 125150 AM15613v1 RDS(on) 0.6 0.4 0 TJ(°C) (norm) 0.2 -75 0 -50 75 -25 50 100 25 125 0.8 150 1 1.2 1.4 1.6 1.8 VGS=10V ID=80A AM15614v1 VDS -75 0 TJ(°C) (norm) -50 75 -25 50 100 0.92 0.94 0.96 0.98 1 1.02 ID = 1mA 25 125 1.04 1.06 150 1.08 1.1 AM15615v1 |
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