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BUZ31 Datasheet(PDF) 1 Page - Infineon Technologies AG

No. de pieza BUZ31
Descripción Electrónicos  SIPMOS Power Transistor
Download  8 Pages
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ31 Datasheet(HTML) 1 Page - Infineon Technologies AG

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Data Sheet
1
05.99
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 31
200 V
14.5 A
0.2
Ω
TO-220 AB
C67078-S.1304-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
TC = 30 ˚C
ID
14.5
A
Pulsed drain current
TC = 25 ˚C
IDpuls
58
Avalanche current,limited by
Tjmax
IAR
14.5
Avalanche energy,periodic limited by
Tjmax
EAR
9
mJ
Avalanche energy, single pulse
ID = 14.5 A, VDD = 50 V, RGS = 25 Ω
L = 1.42 mH, Tj = 25 ˚C
EAS
200
Gate source voltage
VGS
± 20
V
Power dissipation
TC = 25 ˚C
Ptot
95
W
Operating temperature
Tj
-55 ... + 150
˚C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip case
RthJC
≤ 1.32
K/W
Thermal resistance, chip to ambient
RthJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
BUZ 31


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