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SD4933MR Datasheet(PDF) 3 Page - STMicroelectronics |
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SD4933MR Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 20 page DocID023664 Rev 2 3/20 SD4933MR Electrical data 20 1 Electrical data 1.1 Maximum ratings (TCASE = 25 °C) 1.2 Thermal data Table 2. Absolute maximum ratings Symbol Parameter Value Unit V(BR)DSS Drain source voltage 200 V VDGR Drain-gate voltage (RGS = 1 MΩ)200 V VGS Gate-source voltage ±20 V ID Drain current 40 A PDISS Power dissipation 648 W EAS Avalanche energy Single pulse (ID = 56 A - 800 µH coil) 1200 mJ TJ Max. operating junction temperature 200 °C TSTG Storage temperature -65 to +150 °C Table 3. Thermal data Symbol Parameter Value Unit RthJC Junction - case thermal resistance 0.27 °C/W |
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