STD20P3H6AG datasheet(1/15 Pages) STMICROELECTRONICS

No. de pieza	STD20P3H6AG

Descripción Electrónicos	High avalanche ruggedness

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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September 2015

DocID028377 Rev 2

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This is information on a product in full production.

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STD20P3H6AG

Automotive-grade P-channel -

30 V, 33 mΩ typ., -20 A

STripFET™ F6 Power MOSFET in a DPAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

STD20P3H6AG

-30 V

50 mΩ

-20 A



Designed for automotive applications and

AEC-Q101 qualified



Very low on-resistance



Very low gate charge



High avalanche ruggedness



Low gate drive power loss

Applications



Switching applications

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ F6 technology,

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.

Table 1: Device summary

Order code

Marking

Package

Packing

STD20P3H6AG

20P3H6

DPAK

Tape and reel

AM11258v1

D(2, TAB)

S(3)

G(1)

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