STGIPS30C60T-H datasheet(7/19 Pages) STMICROELECTRONICS

No. de pieza	STGIPS30C60T-H

Descripción Electrónicos	SLLIMM??small low-loss intelligent molded module IPM, 3-phase inverter - 30 A, 600 V short-circuit rugged IGBT

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STGIPS30C60T-H

Electrical characteristics

19

3

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Note:

tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are

the switching time of IGBT itself under the internally given gate driving condition.

Table 7. Inverter part

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

VCE(sat)

Collector-emitter

saturation voltage

VCC = Vboot = 15 V, VIN

(1)= 0 ÷ 5 V,

IC = 30 A

-1.9

2.4

V

VCC = Vboot = 15 V, VIN

(1)= 0 ÷ 5 V,

IC = 30 A, TJ = 125 °C

-2.2

ICES

Collector-cut off current

(VIN

(1)= 0 “logic state”)

VCE = 550 V, VCC = VBoot = 15 V

-

100

µA

VF

Diode forward voltage

VIN

(1) = 0 “logic state”, I

C = 30 A

-

2.35

V

Inductive load switching time and energy

ton

Turn-on time

VPN = 300 V,

VCC = Vboot = 15 V,

VIN

(1) = 0 ÷ 5 V,

IC = 30 A

(see Figure 5)

-440

-

ns

tc(on)

Crossover time (on)

-

190

-

toff

Turn-off time

-

780

-

tc(off)

Crossover time (off)

-

135

-

trr

Reverse recovery time

-

505

-

Eon

Turn-on switching losses

-

870

-

µJ

Eoff

Turn-off switching losses

-

740

-

1.

Applied between

HINi, LINi and GND for i = U, V, W.

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