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TPD12S521DBTR Datasheet(PDF) 5 Page - Texas Instruments |
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TPD12S521DBTR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 19 page 5 TPD12S521 www.ti.com SLVS639F – OCTOBER 2007 – REVISED FEBRUARY 2016 Product Folder Links: TPD12S521 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated (1) This parameter is specified by design and verified by device characterization (2) Human-Body Model (HBM) per MIL-STD-883, Method 3015, CDISCHARGE = 100 pF, RDISCHARGE = 1.5 kΩ (3) These measurements performed with no external capacitor on ESD_BYP. (4) Intrapair matching, each TMDS pair (i.e., D+, D–) 7.5 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ICC5 Operating supply current 5V_SUPPLY = 5 V 110 130 µA ICC3 Bias supply current LV_SUPPLY = 3.3 V 1 5 µA VDROP 5V_OUT overcurrent output drop 5V_SUPPLY = 5 V, IOUT = 55 mA 150 200 mV ISC 5V_OUT short-circuit current limit 5V_SUPPLY= 5 V, 5V_OUT = GND 90 135 175 mA IOFF OFF-state leakage current, level-shifting NFET LV_SUPPLY = 0 V 0.1 5 µA IBACK DRIVE Current conducted from output pins to V_SUPPLY rails when powered down 5V_SUPPLY < VCH_OUT TMDS_D[2:0]+/–, TMDS_CK+/–, CE_REMOTE_OUT, DDC_DAT_OUT, DDC_CLK_OUT, HOTPLUG_DET_OUT 0.1 5 µA VON Voltage drop across level-shifting NFET when ON LV_SUPPLY = 2.5 V, VS = GND, IDS = 3 mA 75 95 140 mV VF Diode forward voltage IF = 8 mA, Top diode 0.85 V TA = 25°C (1) Bottom diode 0.85 VCL Channel clamp voltage at ±8 kV HBM ESD TA = 25°C(1)(2) Positive transients 9 V Negative transients -9 RDYN Dynamic resistance I = 1 A, TA = 25°C (3) Positive transients 3 Ω Negative transients 1.5 ILEAK TMDS channel leakage current TA = 25°C (1) 0.01 1 µA CIN, TMDS TMDS channel input capacitance 5V_SUPPLY= 5 V, Measured at 1 MHz, VBIAS = 2.5 V (1) 0.8 1.0 pF ΔCIN, TMDS TMDS channel input capacitance matching 5V_SUPPLY= 5 V, Measured at 1 MHz, VBIAS = 2.5 V (1) (4) 0.05 pF CMUTUAL Mutual capacitance between signal pin and adjacent signal pin 5V_SUPPLY= 0 V, Measured at 1 MHz, VBIAS = 2.5 V (1) 0.07 pF CIN Level-shifting input capacitance, capacitance to GND 5V_SUPPLY= 0 V, Measured at 100 KHz, VBIAS = 2.5 V (1) DDC 3.5 4 pF CEC 3.5 4 HP 3.5 4 |
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