STH400N4F6-2 datasheet(4/18 Pages) STMICROELECTRONICS

No. de pieza	STH400N4F6-2

Descripción Electrónicos	Automotive-grade N-channel 40 V, 0.85 m??typ.,180 A STripFET??VI DeepGATE??Power MOSFETs

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Electrical characteristics

STH400N4F6-2, STH400N4F6-6

4/18

DocID023429 Rev 2

2

Electrical characteristics

(T

CASE

= 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source breakdown

voltage (V

GS

= 0)

I

D

= 250 μA40

V

I

DSS

Zero gate voltage

Drain current (V

GS

= 0)

V

DS

= 40 V

1

μA

V

DS

= 40 V, T

C

=125 °C

100

μA

I

GSS

Gate-body leakage

current (V

DS

= 0)

V

GS

= ± 20 V

± 100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA3

4.5

V

R

DS(on)

Static drain-source

on-resistance

V

GS

= 10 V, I

D

= 60 A

0.85

1.15

m

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 25 V, f = 1 MHz,

V

GS

= 0

-

20500

-

pF

C

oss

Output capacitance

-

1990

-

pF

C

rss

Reverse transfer

capacitance

-

1790

-

pF

Q

g

Total gate charge

V

DD

= 20 V, I

D

= 150 A,

V

GS

= 10 V

-404

-

nC

Q

gs

Gate-source charge

-

110

-

nC

Q

gd

Gate-drain charge

-

130

-

nC

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 20 V, I

D

= 90 A

R

G

=4.7

Ω V

GS

= 10 V

-71

-

ns

t

r

Rise time

-

184

-

ns

t

d(off)

Turn-off-delay time

-

285

-

ns

t

f

Fall time

-

168

-

ns

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