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STP400N4F6 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP400N4F6 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 11 page STI400N4F6, STP400N4F6 Electrical characteristics Doc ID 023434 Rev 1 5/11 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD (1) 1. Current limited by package Source-drain current - 120 A ISDM (1) Source-drain current (pulsed) - 480 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 120 A, VGS = 0 - 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120 A, VDD = 32 V di/dt = 100 A/µs, Tj = 150 °C -TBD ns nC A |
Número de pieza similar - STP400N4F6 |
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