STP10N65K3 datasheet(3/21 Pages) STMICROELECTRONICS

No. de pieza	STP10N65K3

Descripción Electrónicos	N-channel 650 V, 0.75 廓 typ., 10 A SuperMESH3??Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3

Electrical ratings

21

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

I2PAKFP

D2PAK,

TO-220

VDS

Drain source voltage

650

V

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

10

A

ID

Drain current (continuous) at TC = 100 °C

6.3

A

IDM

(1)

1.

Pulse width limited by safe operating area.

Drain current (pulsed)

40

A

PTOT

Total dissipation at TC = 25 °C

35

150

W

IAR

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

7.2

A

EAS

Single pulse avalanche energy (2)

2.

Starting Tj = 25 °C, ID = IAR, VDD = 50 V

212

mJ

Derating factor

0.28

1.2

W/°C

dv/dt (3)

3.

ISD ≤ 10 A, di/dt = 100 A/µs, VPeak < V(BR)DSS

Peak diode recovery voltage slope

12

V/ns

ESD

Gate-source human body model

(R = 1.5 k

Ω, C = 100 pF)

2.8

kV

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1 s; TC=25 °C)

2500

V

Tj

Operating junction temperature

-55 to 150

°C

Tstg

Storage temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

TO-220FP

I2PAKFP

TO-220

Rthj-case Thermal resistance junction-case max

0.83

3.57

0.83

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Rthj-pcb Thermal resistance junction-pcb max

30

°C/W

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