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STFU28N65M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STFU28N65M2 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 12 page November 2015 DocID027607 Rev 3 1/12 This is information on a product in full production. www.st.com STFU28N65M2 N- channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STFU28N65M2 650 V 0.18 Ω 20 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STFU28N65M2 28N65M2 TO-220FP ultra narrow leads Tube TO-220FP ultra narrow leads 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) |
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