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STGB10M65DF2 Datasheet(PDF) 5 Page - STMicroelectronics |
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STGB10M65DF2 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 20 page STGB10M65DF2 Electrical characteristics DocID027429 Rev 5 5/20 Symbol Parameter Test conditions Min. Typ. Max. Unit tf Current fall time - 92 - ns Eon(1) Turn-on switching losses - 0.12 - mJ Eoff(2) Turn-off switching losses - 0.27 - mJ Ets Total switching losses - 0.39 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 10 A, VGE = 15 V, RG = 22 Ω TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) - 18 - ns tr Current rise time - 9 - ns (di/dt)on Turn-on current slope - 890 - A/µs td(off) Turn-off-delay time - 90 - ns tf Current fall time - 170 - ns Eon Turn-on switching losses - 0.26 - mJ Eoff Turn-off switching losses - 0.4 - mJ Ets Total switching losses - 0.66 - mJ tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs Notes: (1)Energy losses include reverse recovery of the diode. (2)Turn-off losses also include the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 10 A, VR = 400 V, VGE = 15 V (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 96 ns Qrr Reverse recovery charge - 373 nC Irrm Reverse recovery current - 13 A dIrr/dt Peak rate of fall of reverse recovery current during tb - 661 A/µs |
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