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STP220N6F7 Datasheet(PDF) 7 Page - STMicroelectronics |
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STP220N6F7 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 13 page STP220N6F7 Electrical characteristics DocID026547 Rev 3 7/13 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics C 1000 100 10 0.1 10 VDS(V) (pF) 1 Ciss Coss Crss 10000 GIPG051120141219MT GIPG051120141232MT VGS(th) 0.40 -75 TJ(°C) (norm) -25 75 25 125 ID=250µ A 175 0.50 0.60 0.70 0.80 0.90 1.00 1.10 GIPG051120141240MT RDS(on) 1.00 0.80 0.60 -75 TJ(°C) (norm) -25 75 25 125 VGS=10V Id=60 A 175 1.20 1.40 1.60 1.80 GIPG051120141245MT V(BR)DSS -75 TJ(°C) (norm) -25 75 25 125 0.96 0.98 1.00 1.02 ID=1m A 1.04 175 GIPG051120141326MT VSD 10 50 ISD(A) (V) 30 110 70 90 0.50 TJ=-55°C TJ=175°C TJ=25°C 0.60 0.70 0.80 0.90 1.00 |
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