SPI11N60S5 datasheet(1/12 Pages) INFINEON

No. de pieza	SPI11N60S5

Descripción Electrónicos	Cool MOS??Power Transistor

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

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2004-03-30

Rev. 2.1

Page 1

SPP11N60S5, SPB11N60S5

SPI11N60S5

Cool MOS™ Power Transistor

VDS

600

V

RDS(on)

0.38

Ω

ID

11

A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO262

P-TO220-3-1

P-TO263-3-2

2

P-TO220-3-1

2 3

1

Type

Package

Ordering Code

SPP11N60S5

P-TO220-3-1

Q67040-S4198

SPB11N60S5

P-TO263-3-2

Q67040-S4199

SPI11N60S5

P-TO262

Q67040-S4338

Marking

11N60S5

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

11

7

A

Pulsed drain current, t

p limited by Tjmax

ID puls

22

Avalanche energy, single pulse

ID = 5.5 A, VDD = 50 V

EAS

340

mJ

Avalanche energy, repetitive tAR limited by Tjmax1)

ID = 11 A, VDD = 50 V

EAR

0.6

Avalanche current, repetitive tAR limited by Tjmax IAR

11

A

Gate source voltage

VGS

±20

V

Gate source voltage AC (f >1Hz)

VGS

±30

Power dissipation, TC = 25°C

Ptot

125

W

Operating and storage temperature

Tj , Tstg

-55... +150

°C

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SPI11N60S5 Datasheet(PDF) 1 Page - Infineon Technologies AG

SPI11N60S5 Datasheet(HTML) 1 Page - Infineon Technologies AG

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