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BF1101R-215 Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BF1101R-215
Descripción Electrónicos  N-channel dual-gate MOS-FETs
Download  15 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

BF1101R-215 Datasheet(HTML) 2 Page - NXP Semiconductors

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1999 May 14
2
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R;
BF1101WR
FEATURES
 Short channel transistor with high
forward transfer admittance to input
capacitance ratio
 Low noise gain controlled amplifier
up to 1 GHz
 Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
 VHF and UHF applications with
3 to 7 V supply voltage, such as
television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1101,
BF1101R and BF1101WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
PIN
DESCRIPTION
1source
2drain
3
gate 2
4
gate 1
Fig.1
Simplified outline
(SOT143B).
BF1101 marking code: NDp.
handbook, 2 columns
Top view
MSB014
12
3
4
Fig.2
Simplified outline
(SOT143R).
BF1101R marking code: NCp.
handbook, 2 columns
Top view
MSB035
1
2
4
3
Fig.3
Simplified outline
(SOT343R).
BF1101WR marking code: NC.
, halfpage
Top view
MSB842
21
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage

7V
ID
drain current

30
mA
Ptot
total power dissipation

200
mW
y
fs
forward transfer admittance
25
30
mS
Cig1-ss
input capacitance at gate 1
2.2
2.7
pF
Crss
reverse transfer capacitance
f = 1 MHz
25
35
fF
F
noise figure
f = 800 MHz
1.7
2.5
dB
Xmod
cross-modulation
input level for k = 1% at
40 dB AGC
100

dB
V
Tj
operating junction temperature

150
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.


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