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CSD18535KTTT Datasheet(PDF) 1 Page - Texas Instruments |
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CSD18535KTTT Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 13 page  Qg - Gate Charge (nC) 0 10 20 30 40 50 60 70 0 1 2 3 4 5 6 7 8 9 10 D004 ID = 100 A VDS = 30 V VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 D007 TC = 25°C, I D = 100 A TC = 125°C, I D = 100 A Gate (Pin 1) Drain (Pin 2) Source (Pin 3) Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD18535KTT SLPS589 – MARCH 2016 CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET 1 1 Features 1 • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-m Ω, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE . Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 60 V Qg Gate Charge Total (10 V) 63 nC Qgd Gate Charge Gate-to-Drain 10.4 nC RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 2.3 m Ω VGS = 10 V 1.6 m Ω VGS(th) Threshold Voltage 1.9 V Ordering Information(1) DEVICE QTY MEDIA PACKAGE SHIP CSD18535KTT 500 13-Inch Reel D2PAK Plastic Package Tape & Reel CSD18535KTTT 50 (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 60 V VGS Gate-to-Source Voltage ±20 V ID Continuous Drain Current (Package limited) 200 A Continuous Drain Current (Silicon limited), TC = 25°C 279 A Continuous Drain Current (Silicon limited), TC = 100°C 197 A IDM Pulsed Drain Current (1) 400 A PD Power Dissipation 300 W TJ, Tstg Operating Junction and Storage Temperature –55 to 175 °C EAS Avalanche Energy, Single Pulse ID = 111 A, L = 0.1 mH, RG = 25 Ω 616 mJ (1) Max RθJC = 0.5°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge |
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