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TC78H610FNG Datasheet(PDF) 9 Page - Toshiba Semiconductor

No. de pieza TC78H610FNG
Descripción Electrónicos  DUAL H-BRIDGE DRIVER IC
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC78H610FNG Datasheet(HTML) 9 Page - Toshiba Semiconductor

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TC78H610FNG
2014-3-24
9
Explanation of operation to H-Bridge
To prevent shoot-through current caused by simultaneous conduction of upper and lower transistors in the
output stage, a dead time is internally generated when switching the upper and lower transistors.
Therefore, synchronous rectification for high efficiency in control can be achieved without an off-time that
is generated via an external input.
A dead time (t2, t4) is a reference value.
IN1A=H,IN2A=L
t5
VM
M
GND
AO1
VM
M
GND
IN1A=H,IN2A=H
t3
AO1
VM
M
GND
IN1A=H,IN2A=L
t1
AO1
VM
M
GND
IN1A=H,IN2A=L → IN1A=H,IN2A=H
t2 = 300 ns (Typ.)
AO1
VM
M
GND
IN1A=H,IN2A=H → IN1A=H,IN2A=L
t4 = 300 ns (Typ.)
AO1
GND
VM
Output Voltage
(AO1)
t1
t2
t3
t5
t4


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