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TPD7104F Datasheet(PDF) 6 Page - Toshiba Semiconductor

No. de pieza TPD7104F
Descripción Electrónicos  1 channel High-Side N channel Power MOSFET Gate Driver
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD7104F Datasheet(HTML) 6 Page - Toshiba Semiconductor

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TPD7104F
2014-10-8
6
Electrical Characteristics (Unless otherwise specified, Tj = -40 to 125°C, VDD = 5 to 18V)
Characteristics
Symbol
Pin
Test Condition
Min
Typ.
Max
Unit
Operating supply voltage
VDD(OPR)
VDD
-
5
12
18
V
Supply current
IDD(off)
VDD VDD = 12V, VIN = VIL, Tj=25°C
-
0.7
3
mA
IDD(on)
VDD VIN = VIH, output is open circuit
-
-
5
mA
Input voltage
VIH
IN
-
3.5
-
-
V
VIL
-
-
-
1.5
Input current
IIH
IN
VIN = 5V
-
20
50
μA
IIL
VIN = 0V
-1
-
1
Output voltage
VOUT
OUT VDD = 5V, VIN = VIH,
IOUT = -100μA, Co = 15000pF
VDD
+8
VDD
+13
VDD
+18
V
VOUT
OUT VDD = 8 to 18V, VIN = VIH,
IOUT = -100μA, Co = 15000pF
VDD
+10
VDD
+15.7
VDD
+18
V
Output resistance
RSINK
OUT IOUT = 1mA
-
500
800
Ω
Diagnosis output leakage current
IDIAGH
DIAG VIN = VIL, VDIAG = 5V
-
-
10
μA
Diagnosis output voltage
VDIAGL
DIAG VIN = VIH, IDIAG = 500μA
-
-
0.4
V
Over current detection voltage
VISOC
IS
VDD = 12V,
RISref pin is open circuit
0.9
1.02
1.2
V
RISref pin output current
IISref(1)
RISref VRISref = 0.2V
-60
-40
-20
μA
IISref(2)
RISref VRISref = 0.4V
-60
-40
-20
μA
IISref(3)
RISref VRISref = 0.6V
-60
-40
-20
μA
Switching time
ton
OUT Refer to Test circuit, Tj = 25°C
-
370
800
μs
toff
-
420
800
Note2 : Typical condition is VDD=12V, Tj=25°C.
Note3 : The current detection voltage is controllable, when connecting resistance to RISref pin.
But, when VRISref(RIS×IISref) is over VISOC, the current detection voltage is VISOC.
Note4 : About the charge pump voltage
So as not to apply over-voltage to the gate-source voltage(VGS) of external power MOSFET, and so as to become the best
driving voltage, the clamping circuit is built into.
And it doesn't output over 36V(Typ.), because of protection of itself.
Test circuit for switching time
TPD7104F
VDD
IN
GND
OUT
10kΩ
15000pF
ton
toff
VDD+4V
1.5V
t
t
IN
OUT
VOUT
12V


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