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TPD7104F Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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TPD7104F Datasheet(HTML) 6 Page - Toshiba Semiconductor |
6 / 13 page TPD7104F 2014-10-8 6 Electrical Characteristics (Unless otherwise specified, Tj = -40 to 125°C, VDD = 5 to 18V) Characteristics Symbol Pin Test Condition Min Typ. Max Unit Operating supply voltage VDD(OPR) VDD - 5 12 18 V Supply current IDD(off) VDD VDD = 12V, VIN = VIL, Tj=25°C - 0.7 3 mA IDD(on) VDD VIN = VIH, output is open circuit - - 5 mA Input voltage VIH IN - 3.5 - - V VIL - - - 1.5 Input current IIH IN VIN = 5V - 20 50 μA IIL VIN = 0V -1 - 1 Output voltage VOUT OUT VDD = 5V, VIN = VIH, IOUT = -100μA, Co = 15000pF VDD +8 VDD +13 VDD +18 V VOUT OUT VDD = 8 to 18V, VIN = VIH, IOUT = -100μA, Co = 15000pF VDD +10 VDD +15.7 VDD +18 V Output resistance RSINK OUT IOUT = 1mA - 500 800 Ω Diagnosis output leakage current IDIAGH DIAG VIN = VIL, VDIAG = 5V - - 10 μA Diagnosis output voltage VDIAGL DIAG VIN = VIH, IDIAG = 500μA - - 0.4 V Over current detection voltage VISOC IS VDD = 12V, RISref pin is open circuit 0.9 1.02 1.2 V RISref pin output current IISref(1) RISref VRISref = 0.2V -60 -40 -20 μA IISref(2) RISref VRISref = 0.4V -60 -40 -20 μA IISref(3) RISref VRISref = 0.6V -60 -40 -20 μA Switching time ton OUT Refer to Test circuit, Tj = 25°C - 370 800 μs toff - 420 800 Note2 : Typical condition is VDD=12V, Tj=25°C. Note3 : The current detection voltage is controllable, when connecting resistance to RISref pin. But, when VRISref(RIS×IISref) is over VISOC, the current detection voltage is VISOC. Note4 : About the charge pump voltage So as not to apply over-voltage to the gate-source voltage(VGS) of external power MOSFET, and so as to become the best driving voltage, the clamping circuit is built into. And it doesn't output over 36V(Typ.), because of protection of itself. Test circuit for switching time TPD7104F VDD IN GND OUT 10kΩ 15000pF ton toff VDD+4V 1.5V t t IN OUT VOUT 12V |
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