ST2341SRG datasheet(3/7 Pages) STANSON

No. de pieza	ST2341SRG

Descripción Electrónicos	SOT-23 package design

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Fabricante Electrónico	STANSON [Stanson Technology]

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ST2341SRG

P Channel Enhancement Mode MOSFET

-3.2A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2341SRG 2014. V1

ELECTRICAL CHARACTERISTICS

( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-20

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA

-0.35

-1.0

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±100

nA

VDS=-20V,VGS=0V

-1

Zero Gate Voltage Drain

Current

IDSS

VDS=-20V,VGS=0V

TJ=55℃

-10

uA

Drain-source On-Resistance

RDS(on)

VGS=-2.5V,ID=-2.0A

VGS=-4.5V,ID=-3.2A

0.045

0.053

0.05

0.06

Ω

Forward Transconductance

gfs

VDS=-5V,ID=-2.8V

6.5

S

Diode Forward Voltage

VSD

IS=-1.6A,VGS=0V

-0.7

-1.0

V

Dynamic

Total Gate Charge

Qg

5.8

10

Gate-Source Charge

Qgs

0.85

Gate-Drain Charge

Qgd

VDS=-6V

VGS=-4.5V

ID≡-2.8A

1.7

nC

Input Capacitance

Ciss

415

Output Capacitance

Coss

223

Reverse Transfer

Capacitance

Crss

VDS=-6V

VGS=0V

F=1MHz

87

pF

13

25

Turn-On Time

td(on)

tr

36

60

42

70

Turn-Off Time

td(off)

tf

VDD=-6V

RL=6Ω

ID=-1A

VGEN=-4.5V

RG=6Ω

34

60

nS

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