1N4148 datasheet(4/4 Pages) DGNJDZ

No. de pieza	1N4148

Descripción Electrónicos	Silicon Epitaxial Planar Switching Diode

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Fabricante Electrónico	DGNJDZ [Nanjing International Group Co]

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1N4148

1N 4148

VR=20V

Tj

10

Admissible repetitive peak forward current

versus pulse duration

Valid provided that leads at a distance of 8 mm from case

are kept at ambient temperature

v=0

0.2

0.1

1

4

5

2

0.1

3

10 -5

2

0.5

5

3

4

2

4

5

10

2

3

IFRM

5

10 -4

25

0

100

A

5

2

10

5

2

1

10 2

100

Leakage current

versus junction temperature

nA

5

4

3

2

5

2

IR

10

T=1/fp

v=tp/T

I

5

tp

-3

2

10

5

-2

10

25

-1

2

tp

10 s

1

25

T

IFRM

t

o

200 C

1N 4148

Número de pieza similar - 1N4148

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NXP Semiconductors	1N4148	57Kb / 8P	High-speed diodes 1999 May 25
Micro Commercial Compon...	1N4148	239Kb / 4P	Metalurgically Bonded Construction Low Current Leakage High Reliability
Won-Top Electronics	1N4148	42Kb / 4P	FAST SWITCHING DIODE
NXP Semiconductors	1N4148	128Kb / 9P	High-speed diodes 2004 Aug 10
Dc Components	1N4148	180Kb / 2P	TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES

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Descripción similar - 1N4148

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
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1N4148 Datasheet(PDF) 4 Page - Nanjing International Group Co

1N4148 Datasheet(HTML) 4 Page - Nanjing International Group Co

Número de pieza similar - 1N4148

Descripción similar - 1N4148

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