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 DIOTEC
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1) Tested with pulses t p = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 2) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm 2 Kupferbelag (Lötpad) an jedem Anschluß 25 Switching Transistors MMBT2907, MMBT2907A Characteristics (T j = 25°C) Kennwerte (T j = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) - V CE = 10 V, - IC = 0.1 mA MMBT2709 MMBT2709A h FE h FE 35 75 – – – – - V CE = 10 V, - IC = 1 mA MMBT2709 MMBT2709A h FE h FE 50 100 – – – – - V CE = 10 V, - IC = 10 mA MMBT2709 MMBT2709A h FE h FE 75 100 – – – – - V CE = 10 V, - IC = 500 mA MMBT2709 MMBT2709A h FE h FE 30 50 – – – – - V CE = 10 V, - IC = 150 mA h FE 100 – 300 Gain-Bandwidth Product – Transitfrequenz - V CE = 20 V, - IC = 50 mA, f = 100 MHz f T 200 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität - V CB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – – 8 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität - V EB = 2 V, IC = ic = 0, f = 1 MHz C EB0 – – 30 pF Noise figure – Rauschzahl - V CE = 10 V, - IC = 100 µA, RS = 1 kΩ, f = 10 Hz...15.7 kHz F – 4 dB – Switching times – Schaltzeiten turn-on time - V CC = 30 V, - VBE = 1.5 V - I C = 150 mA, - IB1 = 15 mA t on – – 45 ns delay time t d – – 10 ns rise time t r – – 40 ns turn-off time - V CC = 30 V, - IC = 150 mA - I B1 = - IB2 =15 mA t off – – 100 ns storage time t s – – 80 ns fall time t f – – 30 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft R thA 420 K/W 2) Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren MMBT2222, MMBT2222A Marking - Stempelung MMBT2907A = 2F MMBT2907 = (M)2B |
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