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BC337-16 Datasheet(PDF) 1 Page - Diotec Semiconductor

No. de pieza BC337-16
Descripción Electrónicos  Si-Epitaxial PlanarTransistors
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Fabricante Electrónico  DIOTEC [Diotec Semiconductor]
Página de inicio  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC337-16 Datasheet(HTML) 1 Page - Diotec Semiconductor

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1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
4
01.11.2003
BC 337 / BC 338
General Purpose Transistors
NPN
Si-Epitaxial PlanarTransistors
NPN
Power dissipation – Verlustleistung
625 mW
Plastic case
TO-92
Kunststoffgehäuse
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A = 25
/C)
Grenzwerte (T
A = 25
/C)
BC 337
BC 338
Collector-Emitter-voltage
B open
V
CE0
45 V
25 V
Collector-Base-voltage
E open
V
CB0
50 V
30 V
Emitter-Base-voltage
C open
V
EB0
5 V
Power dissipation – Verlustleistung
P
tot
625 mW 1)
Collector current – Kollektorstrom (DC)
I
C
800 mA
Junction temp. – Sperrschichttemperatur
T
j
150
/C
Storage temperature – Lagerungstemperatur
T
S
- 55…+ 150
/C
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
V
CE = 1 V, IC = 100 mA
Group -16
h
FE
100
160
250
Group -25
h
FE
160
250
400
Group -40
h
FE
250
400
630
Collector-Emitter cutoff current – Kollektorreststrom
V
CE = 40 V
BC 337
I
CES
200 nA
V
CE = 20 V
BC 338
I
CES
200 nA
V
CE = 40 V, Tj = 125
/C
BC 337
I
CES
10
:A
V
CE = 20 V, Tj = 125
/C
BC 338
I
CES
10
:A


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