BC817W datasheet(2/2 Pages) DIOTEC | Surface mount Si-Epitaxial PlanarTransistors

2 page

1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

General Purpose Transistors

BC 817W / BC 818W

Characteristics, T

j = 25

Kennwerte, T

j = 25

Min.

Typ.

Max.

Collector saturation voltage – Kollektor-Sättigungsspg.

C = 500 mA, IB = 50 mA

CEsat

–

0.7 V

Base saturation voltage – Basis-Sättigungsspannung

C = 500 mA, IB = 50 mA

BEsat

–

1.2 V

Base-Emitter voltage – Basis-Emitter-Spannung

CE = 1 V, - IC = 500 mA

–

1.2 V

Collector-Base cutoff current – Kollektorreststrom

E = 0, VCB = 20 V

CB0

–

100 nA

E = 0, VCB = 20 V, Tj = 150

/CI

CB0

––

Emitter-Base cutoff current – Emitterreststrom

C = 0, VEB = 4 V

EB0

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

CE = 5 V, IC = 10 mA, f = 50 MHz

100 MHz

170 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

6 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

620 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC 807W / BC 808W

Marking of available current gain

groups per type

Stempelung der lieferbaren Strom-

verstärkungsgruppen pro Typ

BC 817-16W = 6A

BC 817-25W = 6B

BC 817-40W = 6C

BC 817W = 6D

BC 818-16W = 6E

BC 818-25W = 6F

BC 818-40W = 6G

BC 818W = 6H

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