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ADV3229ACPZ Datasheet(PDF) 7 Page - Analog Devices |
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ADV3229ACPZ Datasheet(HTML) 7 Page - Analog Devices |
7 / 24 page Data Sheet ADV3228/ADV3229 Rev. A | Page 7 of 24 ABSOLUTE MAXIMUM RATINGS Table 5. Parameter Rating Analog Supply Voltage (AVCC to AVEE) 11 V Digital Supply Voltage (DVCC to DGND) 6 V Supply Potential Difference (AVCC to DVCC) ±0.5 V Ground Potential Difference (AGND to DGND) ±0.5 V Maximum Potential Difference (DVCC to AVEE) 11 V Analog Input Voltage AVEE < VIN < AVCC Digital Input Voltage DGND < DIN < DVCC Exposed Paddle Voltage AGND Output Voltage (Disabled Analog Output) AVEE < VOUT < AVCC Output Short Circuit Duration Momentary Current Internally limited to 55 mA Temperature Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +85°C Junction Temperature 150°C Lead Temperature (Soldering, 10 sec) 300°C Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 6. Thermal Resistance Package Type θJA θJC Unit 72-Lead LFCSP_VQ 29 0.5 °C/W POWER DISSIPATION The ADV3228/ADV3229 operate with ±5 V supplies and can drive loads down to 100 Ω, resulting in a wide range of possible power dissipations. For this reason, extra care must be taken when derating the operating conditions based on ambient temperature. Packaged in the 72-lead LFCSP, the ADV3228/ADV3229 junction- to-ambient thermal impedance (θJA) is 29°C/W. For long-term reliability, the maximum allowed junction temperature of the die should not exceed 125°C; even temporarily exceeding this limit can cause a shift in parametric performance due to a change in stresses exerted on the die by the package. Exceeding a junction temperature of 150°C for an extended period can result in device failure. In Figure 4, the curve shows the range of allowed internal die power dissipation that meets these conditions over the −40°C to +85°C ambient temperature range. When using Figure 4, do not include the external load power in the maximum power calculation, but do include the load current dropped on the die output transistors. 0 1 2 3 4 5 6 7 –40 –20 0 20 40 60 80 AMBIENT TEMPERATURE (°C) TJ = 150°C Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature ESD CAUTION |
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