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ADV3229ACPZ Datasheet(PDF) 7 Page - Analog Devices

No. de pieza ADV3229ACPZ
Descripción Electrónicos  750 MHz, 8 x 8 Analog Crosspoint Switch
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Página de inicio  http://www.analog.com
Logo AD - Analog Devices

ADV3229ACPZ Datasheet(HTML) 7 Page - Analog Devices

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Data Sheet
ADV3228/ADV3229
Rev. A | Page 7 of 24
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Rating
Analog Supply Voltage (AVCC to AVEE)
11 V
Digital Supply Voltage (DVCC to DGND)
6 V
Supply Potential Difference (AVCC to DVCC)
±0.5 V
Ground Potential Difference
(AGND to DGND)
±0.5 V
Maximum Potential Difference
(DVCC to AVEE)
11 V
Analog Input Voltage
AVEE < VIN < AVCC
Digital Input Voltage
DGND < DIN < DVCC
Exposed Paddle Voltage
AGND
Output Voltage (Disabled Analog Output)
AVEE < VOUT < AVCC
Output Short Circuit
Duration
Momentary
Current
Internally limited
to 55 mA
Temperature
Storage Temperature Range
−65°C to +125°C
Operating Temperature Range
−40°C to +85°C
Junction Temperature
150°C
Lead Temperature
(Soldering, 10 sec)
300°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 6. Thermal Resistance
Package Type
θJA
θJC
Unit
72-Lead LFCSP_VQ
29
0.5
°C/W
POWER DISSIPATION
The ADV3228/ADV3229 operate with ±5 V supplies and can
drive loads down to 100 Ω, resulting in a wide range of possible
power dissipations. For this reason, extra care must be taken when
derating the operating conditions based on ambient temperature.
Packaged in the 72-lead LFCSP, the ADV3228/ADV3229 junction-
to-ambient thermal impedance (θJA) is 29°C/W. For long-term
reliability, the maximum allowed junction temperature of the
die should not exceed 125°C; even temporarily exceeding this
limit can cause a shift in parametric performance due to a change
in stresses exerted on the die by the package. Exceeding a junction
temperature of 150°C for an extended period can result in device
failure. In Figure 4, the curve shows the range of allowed internal
die power dissipation that meets these conditions over the −40°C
to +85°C ambient temperature range. When using Figure 4, do
not include the external load power in the maximum power
calculation, but do include the load current dropped on the die
output transistors.
0
1
2
3
4
5
6
7
–40
–20
0
20
40
60
80
AMBIENT TEMPERATURE (°C)
TJ = 150°C
Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature
ESD CAUTION


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