Nombre de pieza
         Descripción
BF720

 Surface mount Si-Epitaxial PlanarTransistors ( 2 Page)


DIOTEC
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1) Tested with pulses t
p = 300
:s, duty cycle # 2% – Gemessen mit Impulsen t
p = 300
:s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
11
01.11.2003
High Voltage Transistors
BF 820, BF 822
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
V
CE = 20 V, IC = 25 mA
h
FE
50
Gain-Bandwidth Product – Transitfrequenz
V
CE = 20 V, IC = 25 mA, f = 100 MHz
f
T
50 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB = 30 V, IE = ie = 0, f = 1 MHz
C
CB0
1.6 pF
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
R
thA
87 K/W 2)
junction to soldering point – Sperrschicht zu Lötpad
R
thS
27 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BF 721, BF 723
1  2 



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