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2SA1352 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SA1352
Descripción Electrónicos  Complement to Type 2SC3416
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1352 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
2SA1352
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -10μ A; IE= 0
-200
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -1mA; RBE= ∞
-200
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -10μ A; IC= 0
-5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -20mA; IB= -2mA
-0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -20mA; IB= -2mA
-1.0
V
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
-0.1
μ A
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
-0.1
μ A
hFE
DC Current Gain
IC= -10mA ; VCE= -40V
40
320
fT
Current-Gain
—Bandwidth Product
IC= -10mA ; VCE= -30V
70
MHz
COB
Output Capacitance
IE= 0; VCB= -30V; f= 1.0MHz
1.7
pF
 h
FE Classifications
C
D
E
F
40-80
60-120
100-200
160-320


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