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 SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR ( 2 Page)


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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 4071
Issue 1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector-Cutoff Current
VCB=60V
IE=0
10
µA
TC=125°C
1
mA
V(BR)CEO*
Collector-Emitter Breakdown Voltage
IC=50mA
IB=0
60
V(BR)CBO*
Collector-Base Breakdown Voltage
IC=1mA
IE=0
120
V(BR)EBO*
Emitter-Base Breakdown Voltage
IE=1mA
IC=0
6
VCE (sat)*
Collector-Emitter Saturation Voltage
IC=2A
IB=0.2A
0.15
0.6
IC=5A
IB=0.5A
0.4
1.0
VBE(sat)*
Base-Emitter Saturation Voltage
IC=2A
IB=0.2A
0.9
1.2
IC=5A
IB=0.5A
1.1
1.3
V
hFE*
DC Current Gain
IC=0.5A
VCE=2V
45
100
IC=2A
VCE=2V
40
85
IC=5A
VCE=2V
40
fT
Transition Frequency
IC=0.5A
VCE=5V
100
MHz
CCBO
Collector-Base Capacitance
IE=0
VCB=10V
35
80
pF
ton
Turn-on Time
IC=5A
IB1=0.5A
150
350
toff
Turn-off Time
IC=5A
IB1= IB2=0.5A
350
650
ns
hfe
Small Signal Current Gain
IC=0.5A
VCE=5V
2.5
5
f=20MHz
* Pulsed: Pulse Duration = 300µs, duty cycle = 1.0%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
1  2 



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